REACTIVE ION ETCHING APPARATUS

摘要

PROBLEM TO BE SOLVED: To enable the dry etching adaptable to microfabrication below specified width, irrespective of the pressure by using a wide antenna as a single- winding high frequency coil for generating a discharge plasma and feeding a more amt. of gas than the vol. of a discharging chamber above a substrate. SOLUTION: A cylindrical vacuum chamber 1 has a top part made from a disk-like dielectric 2. A magnetic field generating means for forming an annular magnetic neutral line is composed of a small-diameter disk-like or doughnut- like permanent magnet 3 disposed on the top of the dielectric 2 and annular permanent magnet 4 having a larger inner diameter than the magnet 3. A wide antenna disposed between the two magnets 3, 4 forms a single-winding high frequency coil 5 for generating a discharge plasma. An etching gas to be fed is controlled so that its flow rate is 15(±3)×V sccm where the vol. of a reaction chamber is V lit. Thus a reactive dry etching apparatus adaptable to fine machining below 0.3μm width can be realized.