| 摘要 |
PROBLEM TO BE SOLVED: To make magnetic characteristics and optical characteristics uniform and to attain higher C/N by using a sintered target having the specific compsn. ratios of bismuth Bi on a substrate having a specific coefft. of thermal expansion and softening point, thereby making it possible to attain garnet crystallization at a crystallization rate of 100%. SOLUTION: An amorphous film is deposited on the planar substrate 1 consisting of quartz glass, etc., and having the coefft. of thermal expansion of <=100×10<-7> / deg.C and the softening point of >=870 deg.C by prescribed film deposition conditions and surface etching conditions after the film depositions by using the sintered target having the Bi compsn. ratios existing from 15 to 4 at.% when oxygen is precluded and contg. Bi, rear earth elements, Fe, Ga and O and thereafter, the amorphous film is crystallized under prescribed heat treatment conditions, by which the crystallized film (garnet film) 2 not contg. the crystal phases exclusive of the garnet having the crystallization rate of 100% is obtd. The Bi is added at the prescribed compsn. ratio and other elements are added to the sintered target, by which the crystallization of the garnet is similarly obtd.
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