| 摘要 |
PROBLEM TO BE SOLVED: To obtain superior ohmic contact of low Mg concentration by forming a positive electrode, containing at least Ru and Ni, on the surface of a p-type nitride semiconductor layer doped with p-type impurities. SOLUTION: A buffer layer 2, an n-side contact layer 3, an anti-crack layer 4, an n-side clad layer 5, an n-side optical guide layer 6, an active layer 7, a p-type cap layer 8, a p-side optical guide layer 9 and a p-side clad layer 10 are laminated on a sapphire substrate 1 in this order, and after this, a p-side contact layer 11 comprising p-type GaN doped with Mg is formed, and then a positive electrode 20 comprising an alloy containing Ru and Ni by 50% each is formed on the entire surface of the uppermost layer. When Mg concentration becomes 1×10<18> cm<3> , superior ohmic is obtained with Ru/Ni, and by using such a positive electrode containing Ru and Ni as this, superior ohmic contact of low Mg concentration is obtained. |
