| 摘要 |
PROBLEM TO BE SOLVED: To provide a high sensitivity high accuracy semiconductor inertia sensor with the low cost that eliminates the need for sticking of a wafer and laser machining which is suitable for high volume production and is low in parasitic capacitance, and in which easy and strong anode junction is applicable. SOLUTION: An oxide film 20 having an opening 20a is formed on one surface of a silicon wafer 21, and a polysilicon layer 22 is formed on a remaining one surface of the wafer 21 and on the film 20. The layer 22 on the film 20 is selectively etched and removed to form a plurality of polysilicon areas 22a, 22b, 22c separated from each other. A structure 23 including these areas is joined with a glass substrate 10 including a recess 11. The wafer 21 and the layer 22 are etched and removed and then the film 20 is removed, whereby a semiconductor inertia sensor 30 includes fixed electrodes 27, 28 comprising polysilicon joined with the glass substrate 10, and a movable electrode 26 comprising polysilicon floating above the substrate 10. |
