| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated-circuit device which realizes a high-speed operation and a low current consumption and whose reliability can be evaluated surely. SOLUTION: Reference-voltage generation circuits 34a, 34p which generate reference voltages having mutually different voltage levels are installed respectively at power-supply pads 30a, 30p. In addition, voltage-drop circuits 36a, 38a, 38p, 36p by which power-supply voltages at corresponding external power- supply pads are dropped to corresponding reference voltage levels so as to be transmitted to corresponding internal power-supply lines 37a, 38p are installed so as to correspond to the respective reference-voltage generation circuits. In addition, switching transistors 39a, 39p which are set to a continuity state in a stress acceleration node and by which the corresponding to output nodes of the corresponding reference-voltage generation circuits are installed at the output nodes of the reference-voltage generation circuits. |
