| 摘要 |
PROBLEM TO BE SOLVED: To have a multi-layer interconnection structure forming an upper layer wirings on a substantially flat insulation layer surface by measuring the thickness of a layer insulation film having a planarizing function at close wiring regions and selecting the width of a lower layer dummy wiring below an upper layer isolated wiring corresponding to the measured thickness. SOLUTION: The manufacturing method comprises step S1 of obtaining the relation between the width of a lower layer dummy wiring and thickness of a layer insulation film having a planarizing function thereon, step S2 of forming the layer insulation film on first close wiring regions on a semiconductor substrate under specified condition and measuring its thickness, step S3 of determining the dummy wiring width W at isolated regions so that the thickness M1 of the layer insulation film is equal to that at the isolated regions, step S4 of forming a lower layer wiring at the first regions and lower layer dummy wiring of the width W at the second isolated regions where wirings are not close, and forming a layer insulation film 14 on the surface including the first and second regions and upper layer wirings 15, 16 thereon. |
