| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method by which the etching of a semiconductor laser provided with an AlGaInP current constriction layer performed for forming a stripe groove can be controlled easily. SOLUTION: In a semiconductor laser manufacturing method, (a) a lower clad layer 2 composed of an AlGaInP compound semiconductor, an active layer 3, and a first upper clad layer 4 are sequentially epitaxially grown on a substrate 1, (b) a current construction layer 6 composed of an AlGaInP compound semiconductor is epitaxially grown, (c) a GaAs protective layer 6a is epitaxially grown, (d) annaling is performed in a high vacuum over the level of 1×10<-4> with a high arsenic partial pressure higher than the vapor pressure of arsenic, (e) a stripe-like groove is formed by simultaneously etching the protective layer 6a and current constricting layer 6 with the same enchant, and (f) a second supper clad layer 7 composed of an AlGaInP compound semiconductor and a GaAs contact layer 8 are epitaxially grown.
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