| 摘要 |
<p>A semiconductor processing method of forming a contact opening to a region adjacent a field isolation mass includes: a) forming a field isolation mass (40) within a semiconductor substrate (26) by a trench and refill technique, and a substrate masking layer over the substrate adjacent the field isolation mass, the field isolation mass being capped with an etch stop cap (50), the field isolation mass having a sidewall covered by the masking layer; (b) removing the substrate masking layer away from the isolation mass to expose at least a portion of the isolation mass sidewall; c) forming an etch stop cover (62) over the exposed isolation mass sidewall; d) forming an insulating layer (68) over the isolation mass and substrate area adjacent the isolation mass; and e) etching a contact opening (70) through the insulating layer adjacent the isolation mass selectively relative to the isolation mass to etch stop cap (50) and cover (60). A semiconductor structure is also described.</p> |
