发明名称 METHOD FOR MANUFACTURING MAGNETORESISTANCE ELEMENT
摘要 <p>A method of manufacturing a magnetoresistance element which can reproduce magnetic signals with higher sensitivity. The manufacturing method includes the steps of providing a vacuum below 10-9 Torr in a film forming chamber for forming a nonmagnetic layer and ferromagnetic layer; performing plasma-etching of the surface of a substrate by using a mixture of a gas (a) containing at least oxygen or water introduced into the chamber and an Ar gas (b) introduced into the chamber introduced into the chamber in a vacuum state controlled to higher than 10-9 Torr; and forming the nonmagnetic and ferromagnetic layers on the etched substrate by sputtering a prescribed target by using the mixture of the gases (a) and (b).</p>
申请公布号 WO1998044521(P1) 申请公布日期 1998.10.08
申请号 JP1997001091 申请日期 1997.03.28
申请人 发明人
分类号 主分类号
代理机构 代理人
主权项
地址
您可能感兴趣的专利