Output circuit for power IC with high breakdown voltage

摘要

The circuit includes a totem pole circuit (2a) which contains a MOSFET (N1) with a high breakdown voltage and a conduction type n channel. A second MOSFET (N2) with a high breakdown voltage and a conduction type n channel is located on the low voltage side. A bias offset circuit (1a) controls the MOSFET on the high voltage side. A MOSFET (P1) with a conduction type p channel and a high breakdown voltage is connected between the gate of the MOSFET located on the high potential side and an output of the bias offset circuit. The gate of the MOSFET with the conduction type p channel is connected to the output of the bias offset circuit. A resistance (R2) is connected between the gate of the MOSFET on th high potential side and the drain terminal of the MOSFET with the conduction type p channel. The voltage supply (Vdh) is connected with its high potential terminal to the source of the MOSFET with the conduction type p channel.