| 摘要 |
A passivating layer is produced on a silicon semi-conductor substrate by forming a film of silicon dioxide on a surface of the substrate, depositing a layer of lead on the oxide film, and heating the resulting body in an oxidizing atmosphere (which may include an organo-oxysilane, such as tetraethoxysilane, as well as oxygen). The initial oxide film may be formed by thermal decomposition of an organo-oxysilane. |
