| 摘要 |
<p>PURPOSE:To stably operate a semiconductor element to be contained without erroneous operation for a long period by covering the upper surface of an insulating base with a metallized metal layer, and securing an external lead terminal onto the layer through a special glass member. CONSTITUTION:An insulating base 1 is covered on its upper surface with a metallized metal layer 4. An external lead terminal 5 is secured onto the layer 4 through a glass member 6 having a two-layer structure of an upper glass material 6a and a lower glass material 6b, and a capacity element A using the member 6 as a dielectric material is formed between the layer 4 and the terminal 5. The element A is connected between the power source electrode and a ground electrode of a semiconductor element 3, and so operated as not to be effected adversely by the variation in power supply voltage. The member 6 has the two-layer structure formed of the materials 6a, 6b, the material 6a is formed of a glass material having 17.0 or more of permittivity (1MHz at the ambient temperature) and the material 6b is formed of a glass material having 14.0 or less of permittivity (1MHz at the ambient temperature).</p> |
