Intermediate mask for pattern transfer in semiconductor manufacture

摘要

The method involves forming a dicing line pattern (3) along the chip pattern (2) periphery in X and Y axial directions on the main surface of a substrate (1). A measuring pattern (8,9) is formed on the dicing line in the X axis direction with a second measuring pattern (5,4) formed in the Y axis direction so that the chip pattern is enclosed between the two measuring patterns. A third measuring pattern (10,11) is formed on the dicing line pattern in the Y axis direction which, with a fourth measuring pattern (7,6) in the X axis direction, encloses the chip pattern. The important distances of the mask salient points are specified.