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发明名称
Method for selectively etching GaAs over AlGaAs
摘要
申请公布号
EP0607662(B1)
申请公布日期
1998.10.07
申请号
EP19930309218
申请日期
1993.11.18
申请人
AT&T CORP.
发明人
SMITH, LAWRENCE EDWIN
分类号
H01L21/3065;H01L21/302;H01L21/306;(IPC1-7):H01L21/306
主分类号
H01L21/3065
代理机构
代理人
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