Means for testing a gate oxide

摘要

The method of testing a DMOS power transistor (2) comprises the phases of: arranging a switch (4) between the low-voltage circuitry (3) and the gate terminal (G) of the DMOS power transistor (2); maintaining the switch (4) in an open condition; applying a stress voltage to the gate terminal (G); testing the functionality of the DMOS power transistor (2); and, if the test has a positive outcome, short-circuiting the switch (3) through zapping. <IMAGE>