| 摘要 |
<p>A semiconductor device which can secure its reliability particularly in a fine area, has a large capacity, and can operate at a high speed, and a method for manufacturing the device. In the semiconductor device, a gate insulating film, a floating gate electrode, an interlayer insulating film, a control gate electrode, and memory cells composed of source areas and drain areas of a second conductivity type are arranged in a matrix state in a first area on the main surface of a semiconductor substrate, and the elements of the memory cells are separated with a shallow-groove structure. Since the shallow-groove element separating structure formed by burying an insulating film is used for the element separation, the deterioration of the element separation withstand voltage in a fine area can be prevented and the threshold fluctuation of a selected transistor can be reduced. In addition, the disturbance resistance of the memory cells can be improved by dividing the memory cells in a memory mat by the selected transistor.</p> |
