Method to optimize p-channel CMOS ICs using Qbd as a monitor of boron penetration

摘要

A method to monitor boron penetration and optimize process parameters in the fabrication of a semiconductor device have an n+ or a p--polysilicon gate. The charge-to-breakdown QBD value is used to monitor the boron penetration into the polysilicon/gate oxide interface. Values of QBD for various values of process parameters are determined and optimized values for these process parameters are derived.