| 摘要 |
A layer of silicon dioxide is formed conformably over a substrate having a surface with non-planar topography. The layer of silicon dioxide is then implanted with a species that affects the etch rate of the silicon dioxide when etched in an HF based etchant. The implant energy, dose, and direction are chosen such that only a selected portion of the layer of silicon dioxide is implanted with the implant species. The layer of silicon dioxide is then etched in an HF based etchant. The HF etchant etches both doped and undoped silicon dioxide, but the implanted silicon dioxide is removed at a faster rate or slower rate, depending on the implant species, than the unimplanted silicon dioxide. This allows the formation of specialized silicon dioxide structures due to the selectivity of the etch as between the implanted and unimplanted portions of the layer of silicon dioxide, without any damage to silicon.
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