发明名称 |
Field emission device with edge emitter and method for making |
摘要 |
Thin-film edge emission devices and methods for forming are provided. The emitters are formed to have extended edges. They are formed by oblique deposition on a surface of material which extends from a substrate. The material is substantially removed to leave the thin-film emitter. A gate may then be formed around the emitter. Arrays of such thin-film emitters may be used in a variety of electronic devices.
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申请公布号 |
US5818166(A) |
申请公布日期 |
1998.10.06 |
申请号 |
US19960678433 |
申请日期 |
1996.07.03 |
申请人 |
SI DIAMOND TECHNOLOGY, INC. |
发明人 |
KARPOV, LEONID DANILOVICH;GENELEV, ANDRE PETROVICH;DRATCH, VLADIMIR ANATOLEVICH |
分类号 |
H01J1/304;(IPC1-7):H01J1/30 |
主分类号 |
H01J1/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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