发明名称 |
Method of blind border pattern layout for attenuated phase shifting masks |
摘要 |
A mask and method of forming a mask which minimizes the light transmission in the border regions of attenuating phase shifting masks. The mask uses square contact holes formed in the attenuating phase shifting material in the border regions. The square contact holes are located at the edge of the mask pattern region beginning at each corner of the mask pattern region and working toward the center of each side of the mask pattern region using a contact hole pitch. At the center of each side of the mask pattern region the pitch is discontinuous and a row of rectangular contact holes are formed.
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申请公布号 |
US5817439(A) |
申请公布日期 |
1998.10.06 |
申请号 |
US19970857166 |
申请日期 |
1997.05.15 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
TZU, SAN-DE;CHEN, YI-HSU;TU, CHIH-CHIANG |
分类号 |
G03F1/00;G03F1/14;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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