发明名称 Method of blind border pattern layout for attenuated phase shifting masks
摘要 A mask and method of forming a mask which minimizes the light transmission in the border regions of attenuating phase shifting masks. The mask uses square contact holes formed in the attenuating phase shifting material in the border regions. The square contact holes are located at the edge of the mask pattern region beginning at each corner of the mask pattern region and working toward the center of each side of the mask pattern region using a contact hole pitch. At the center of each side of the mask pattern region the pitch is discontinuous and a row of rectangular contact holes are formed.
申请公布号 US5817439(A) 申请公布日期 1998.10.06
申请号 US19970857166 申请日期 1997.05.15
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 TZU, SAN-DE;CHEN, YI-HSU;TU, CHIH-CHIANG
分类号 G03F1/00;G03F1/14;(IPC1-7):G03F9/00 主分类号 G03F1/00
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