发明名称 SILICON CARBIDE MEMBER AND ITS PRODUCTION
摘要 PROBLEM TO BE SOLVED: To obtain a lightweight and small heat capacity SiC member free from the fear of contaminating a product such as a wafer supported by the SiC member with impurities. SOLUTION: After a SiC hollow body 11 composed of a SiC under coating film 11a is manufactured by forming the SiC under coating film 11a on the surface of a carbon base body 13 by CVD treatment and by burning the carbon base body 13 forming the SiC under coating film 11a on the surface to eliminate the carbon base body 13, a SiC member 15 is obtained by forming a SiC coating film 12 on the surface of the SiC hollow body 11 by the CVD treatment again. The carbon base body is desirably a carbon foamed body obtained by roasting a polyurethane foam or a polyvinyl alcohol sponge.
申请公布号 JPH10265265(A) 申请公布日期 1998.10.06
申请号 JP19970072964 申请日期 1997.03.26
申请人 MITSUBISHI MATERIALS CORP 发明人 INUKAI TAKAO;SEKIGUCHI MASAHIRO
分类号 C08J9/36;C04B35/52;C04B35/565;C04B38/06;C04B41/50;H01L21/205;H01L21/683 主分类号 C08J9/36
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