| 摘要 |
1,088,624. Semi-conductor devices. CENTRE ELECTRONIQUE HORLOGER. Jan. 21, 1966 [Jan. 29, 1965], No. 2851/66. Heading H1K. [Also in Division G3] A planar semi-conductor device comprises a transistor provided with a distributed capacitative-resistive connection between the base and collector regions. As shown, Fig. 1, a P-type base region 2 having an elongated arm 5 is diffused into an N- type silicon wafer 1 which forms the collector, and an N-type emitter region 7 and a further N-type region 8 are then diffused into the base region. Emitter region 7 is located near one end of base region 2 so that the edges of region 8 contact collector region 1 thus burying part of the base region. This increases the basecollector capacitance without a substantial increase in leakage current. Ohmic contacts 3, 4 are applied to base region 2 and emitter region 7 and the end of arm 5 of base region 2 remote from the emitter is shorted to the collector by contact 6. The collector contact is applied to the lower face 9 of wafer 1. The diffusions are performed using photo-masked oxide diffusion masks, the N-type impurity being boron, and the P-type impurity being phosphorus. Arm 5 of base region 2 may alternatively have a serpentine shape. The device may be utilized in a circuit for an electrically maintained mechanical resonator (see Division G3). |
