Semiconductor device in the ultra-low-temperature state

摘要

1,088,452. Semi-conductor oscillator; waveguides. HITACHI SEISAKUSHO KABUSHIKI KAISHA. Sept. 30, 1964 [Oct. 1, 1963], No. 39845/64. Headings H1K and H1W. [Also in Division H3] Oscillations are generated in a semi-conductor device comprisng at least first means to pass a direct current through a semi-conductor body maintained at a temperature low enough to produce negative resistance characteristics, a second means to apply a magnetic field perpendicular to the current and a third means to lead out the oscillations generated in the device, perpendicularly to both the electric and magnetic fields said third means comprising a right parallelipiped semi-conductor bar one end surface of which is in conjunction with a side surface of the body. A Ge semi-conductor body 9 doped with In and compensated with Sb has a Ge semi-conductor bar 11 having a PN junction at one end 10, disposed against a side thereof. The surfaces of the two semi-conductors are optically flat and the mutually facing sides are optically parallel. The whole device is immersed in liquid He and a direct current applied together with a magnetic field at right angles thereto. Oscillations generated in 9 are led out through 11 which acts as a waveguide and are detected by device 12. The relationship between the frequency of the oscillations and the various parameters, e.g. magnetic field, dimensions and impurity concentration, is expressed mathematically. The semi-conductor 9 may also be made of Si or an AIIIBV compound, e.g. InSb or GaAs. It is stated to be known that when a cryosat doped with a deep trap level is irradiated by light of extremely low intensity the value of critical voltage which gives rise to negative resistance will increase.