发明名称 |
E2PROM device having erase gate in oxide isolation region in shallow trench and method of manufacture thereof |
摘要 |
An E2PROM device includes a semiconductor body having source and drain regions and a channel region, with a gate oxide over the channel region and a floating gate over the gate oxide. An oxide isolation region contains a doped polysilicon erase gate, so that erasing of the device takes place by electron flow from the floating gate to the erase gate through a thin oxide portion of the oxide isolation region, at a position spaced from the gate oxide. The inclusion of the erase gate in the oxide isolation region results in smaller overall device size than previously achieved.
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申请公布号 |
US5818082(A) |
申请公布日期 |
1998.10.06 |
申请号 |
US19960610688 |
申请日期 |
1996.03.04 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
WANG, HSINGYA ARTHUR;YOUNG, JEIN-CHEN;HAMILTON, DARLENE |
分类号 |
H01L21/336;H01L21/8247;H01L27/115;H01L29/423;(IPC1-7):H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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