| 摘要 |
PROBLEM TO BE SOLVED: To provide an improved method for epitaxially growing a group III nitride material by molecular beam epitaxy. SOLUTION: This method for growing the layer of the group III nitride material on a substrate by the molecular beam epitaxy includes a stage for arranging the substrate in a vacuum chamber 10, a stage for reducing the pressure in this vacuum chamber down to the pressure adequate for epitaxy growth by the molecular beam epitaxy, a stage for supplying ammonia through the outlet 22 of a first supply pipe 20 into the vacuum chamber and allowing the ammonia to flow toward the substrate and a stage of supplying a group III element in an element form through the outlet of a second supply pipe into the vacuum chamber, allowing the group III element to flow toward the substrate and growing the layer contg. the group III nitride on the substrate by the molecular beam epitaxy. The outlet of the first supply pipe in this method is arranged nearer the substrate than the outlet of the second supply pipe. |
