| 摘要 |
According to a cleaning method of a vacuum processing apparatus, an aluminum film formed on a semiconductor substrate and covered by a resist pattern is etched by a gas containing chlorine radicals in a processing chamber of the vacuum processing apparatus and, after that, a plasma of diluted gases of mixture gases consisting of a gas containing oxygen radicals, a gas containing fluorine radicals, and a gas containing chlorine radicals is generated in the processing chamber, thereby removing residual reaction products.
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