发明名称 High-yield methods of fabricating large substrate capacitors
摘要 Described are methods of manufacturing large substrate capacitors for multi-chip module applications and the like using procedures compatible with common semiconductor fabrication procedures. A capacitor is formed where the top electrode thereof is divided into a plurality of segmented pads which are initially electrically isolated from one another. Each segmented pad forms a capacitor with the underlying dielectric layer and bottom capacitor electrode. Each segmented capacitor is electrically tested, and defective ones are identified. A conductive layer is thereafter formed over the segmented pads such that the conductive layer is electrically isolated from the pads of defective capacitors. The conductive layer electrically couples the good capacitors in parallel to form a high-value bypass capacitor which has low parasitic inductance. Large embedded MCM bypass capacitors can thereby be fabricated with minimal impact to the overall manufacturing yield. Novel testing methods within a scanning electron microscope environment are also disclosed.
申请公布号 US5817533(A) 申请公布日期 1998.10.06
申请号 US19960692800 申请日期 1996.07.29
申请人 FUJITSU LIMITED 发明人 SEN, BIDYUT K.;PETERS, MICHAEL G.;WHEELER, RICHARD L.;WANG, WEN-CHOU VINCENT
分类号 H01L21/02;H01L21/66;(IPC1-7):H01L21/00 主分类号 H01L21/02
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