METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

The invention relates to a method of manufacturing a semiconductor device in which an etching process is used so as to etch regions consisting of AIIIBV compounds selectively relative to each other. According to the invention in the etching process an etching bath is used having a water-dissolved oxidizing material and a reducing material constituting together a redox system. In such an etching bath with redox system the selectivity is established by the choice of the concentrations of the materials and of the pH.