| 摘要 |
A shield type magnetoresistive head has a GMR element exhibiting a giant magentoresistance effect phenomenon due to a spin dependent scattering, and an electrode, the GMR element comprising upper and lower shield films, upper and lower gap insulation films, a magnetic field detecting layer in which a magnetization rotates by a signal magnetic field, a non-magnetic layer, a magnetization fixed layer in which the magnetization is substantially not moved by the signal magnetic field, and a bias film contacting to the magnetization fixed layer, wherein a distance from a film-thicknesswise center of the magnetic field detecting layer to a surface of the shield film contacting to the gap film including the magnetization fixed layer is set to be greater compared with that on a side of not including the magnetization fixed layer.
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