| 摘要 |
PROBLEM TO BE SOLVED: To provide a new producing method of a novel carbon nanotube and a carbon nanotube film composed of many numbers of the carbon nanotubes oriented in a film thickness direction. SOLUTION: A carbon nanotube 31 is formed on a SiC 1 of a part 11, where a silicon atom is removed by heating the SiC 1 under a vacuum. The carbon nanotube 31 having high purity is produced at a high yield by this method. Moreover since the carbon nanotube 31 formed by the method has a tendency to orient in the perpendicular direction to the surface of SiC crystal, a high oriented nanotube film 3 composed of the carbon nanotubes is obtained. The nanotube film 3 with a large area is easily produced by this method. |
