| 摘要 |
1,090,422. Semi-conductor devices. RADIO CORPORATION OF AMERICA. Oct. 6, 1965 [Nov. 2, 1964], No. 42472/65. Heading H1K. [Also in Divisions E4 and H3] A memory device comprises a plurality of superconductor loops extending perpendicularly from an insulating substrate with means for selectively establishing persistent currents in the loops. In Fig. 1, a lead ground plane 10 is covered with a silicon monoxide layer 12 on which are a plurality of digit lines 14, 14a consisting of a tin layer 16 in contact with a lead layer 18 except for a bridge portion 20 which forms the conductive loop. The word lines consist of lead strips 24, 24a, which penetrate each loop. If a current I D is applied to a digit line, the current flows mainly through the tin strip 16 until a word current pulse Iw is passed through an appropriate conductor 24 when the combined magnetic field drives the tin 34 under the bridge portion normal so that the digit current is diverted to flow through bridge 20. If the word current Iw and then the digit current I D is terminated, a persistent current is set up round the loop. Information is read (destructive read-out) by applying a current to a word line so that, if persistent current is flowing, the tin is driven normal and the resulting discharge of loop current energy develops a voltage across the tin portion. In a modification, the word line lead is positioned immediately outside the loop, and in a further modification (Fig. 7, not shown) a " bit-organized " memory is formed by providing X and Y lead strip conductors inside each loop of an array so that the tin strip is driven normal when all three currents (X, Y and digit) coincide. A further embodiment is described (Fig. 10, not shown) in which a 2 x 2 array is formed by having two loops interlacing at each operative point. A modification of this arrangement is also described (Fig. 11, not shown) in which each word line 210 is subdivided into a plurality of word storage locations each of three bits, 218, 220, 222.
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