Vertical cavity surface emitting laser with low band gap highly doped contact layer

摘要

A contact structure for a vertical cavity surface emitting laser is described. The contact structure comprises a surface metal contact, a degeneratively doped layer of low bandgap material less than 200 ANGSTROM thick, and a plurality of current spreading layers. The contact structure provides a low ohmic path between the metal contact and the active region of the vertical cavity surface emitting laser.