Process for manufacturing capacitors in a solid state configuration

摘要

Capacitors, in particular stacked capacitors for a dynamic memory cell configuration are manufactured by first forming a sequence of layers, which include layers made of a first conductive material alternating with layers made of a second material. The second material can be selectively etched with respect to the first material. Layered structures are formed from the sequence of layers, with the flanks of the layered structures each having a conductive support structure. The layered structures are formed with openings, such as gaps, in which the surface of the layers is exposed. The layers made of the second material are selectively removed with respect to the layers made of the first material. The exposed surface of the layers made of the first material and of the support structure are provided with a capacitor dielectric, onto which a counter-electrode is placed. The capacitor is made by etching p--doped polysilicon that is selective to p+-doped polysilicon.