| 摘要 |
PCT No. PCT/GB95/01760 Sec. 371 Date Aug. 25, 1997 Sec. 102(e) Date Aug. 25, 1997 PCT Filed Jul. 25, 1995 PCT Pub. No. WO96/04674 PCT Pub. Date Feb. 15, 1996A field emitter and its fabrication method is described in which a gate electrode is formed around and substantially encloses the emitter. The emitter is formed on a silicon substrate and is in the form of a pyramid structure. The surface of the pyramid includes an oxide layer on it. The whole device is baked until the photoresist is drawn, by surface tension, towards the base of the pyramid to expose the metal layer. Etching of the metal layer and the oxide layer produces the finished device which may suitably be employed as a switch in an electronic circuit.
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