发明名称 High power FET switch
摘要 In an FET switch for controllably allowing and inhibiting passage of an input signal in ON state and OFF state, respectively, FETs are connected in a multi-stage configuration. A control voltage adjusting circuit is connected between a gate and one of a drain and a source of each FET. The control voltage adjusting circuit adjusts a gate-source voltage so as to follow the variation of a drain-source voltage. The input voltage applied to the FET switch in OFF state is divided by the plurality of FETs. Since the variation of the gate-source voltage follows the variation of the drain-source voltage, the FET switch is hardly influenced by an amplitude of the input signal.
申请公布号 US5818283(A) 申请公布日期 1998.10.06
申请号 US19960678668 申请日期 1996.07.11
申请人 JAPAN RADIO CO., LTD. 发明人 TONAMI, YOSHIYUKI;YOSHIDA, GORO;YAMASHITA, KAZUO
分类号 H03K17/10;H03K17/687;H03K17/693;(IPC1-7):H03K17/687 主分类号 H03K17/10
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