Active matrix substrate and manufacturing method of the same

摘要

First and second gate insulating films, a semiconductor layer made of a-Si(i), and an etching stopper layer are formed to cover a gate electrode on a glass substrate. A drain electrode side contact layer and a source electrode side contact layer are made out of a-Si(n+) in such a manner to be cut off on the etching stopper layer. A disconnection preventing a-Si(n+) wire is formed below a source wire in its longitudinal direction, and atop of which a pixel electrode is formed. Since the disconnection preventing a-Si(n+) wire and source electrode side contact layer are spaced apart, static-induced characteristics deterioration of TFT and the point and line defects during the substrate fabrication sequence can be eliminated and the non-defective ratio of the display device can be improved drastically.