COMPOSANT ELECTRIQUE OU ELECTRONIQUE, NOTAMMENT CIRCUIT ELECTRIQUE OU ELECTRONIQUE OU MEMOIRE NON VOLATILE

摘要

The invention concerns a component of composite structure (10) consisting of a layer of ferroelectric material (11) and at least a thin film of semiconductor material or of a thin metal or supraconducting film (12) in close contact with the layer of ferroelectric material (11). It further comprises means for generating local modifications of said ferroelectric material polarisation. These means include a device for applying a voltage between at least one punctiform electrode (13) arranged for selectively scanning said composite structure (10) surface facing that consisting of the semiconductor or thin metal or supraconducting film (12), and said semiconductor or thin metal or supraconducting film.