Instrument and method for 3-dimensional atomic arrangement observation

摘要

3-dimensional observation is carried out on the atomic arrangement and atomic species in a thin-film specimen at an atomic level in order to clarify the existence states of defects and impure atoms in the crystals. For that purposes, an instrument and a method for 3-dimensional observation of an atomic arrangement are implemented by a system comprising a scanning transmission electron microscope equipped with a field emission electron gun (8) operated at an acceleration voltage of greater than 200 kV, a specimen goniometer/tilting system (12) having a control capability of the nanometer order, a multi-channel electron detector (13) and a computer (14) for executing software for controlling these components and 3-dimensional image-processing software. Point defects and impure atoms, which exist in joint interfaces and contacts in a ULSI device, can thereby be observed. As a result, the causes of bad devices such as current leak and poor voltage resistance can be analyzed at high accuracy.