| 摘要 |
PURPOSE:To enable light rays which are partially absorbed by an optical active layer to be reflected at an effective angle and to prevent a short circuit from occurring in a solar cell by a method wherein all or a part of a material which forms a buffer layer of prescribed thickness is polycrystalline ZnO, ZnS, or ZnSe, and the crystal concerned is maximized in grain diameter and irregularities formed on the surface of the buffer layer are made optimal in level difference. CONSTITUTION:A light reflecting metal layer is formed on a base, and then a buffer layer of ZnO 0.2-14mum in thickness is formed, where irregularities provided to its surface are set to 0.5mum in level difference. Provided that the buffer layer is 0.5mum in grain size and 1.2mum in thickness, it is formed through a required method under a required condition, and then an N-type Si semiconductor layer, an I-type Si semiconductor layer, and a P-type Si semiconductor layer are formed through a prescribed device to constitute a photovoltaic layer 104, a transparent electrode 105 of ITO is deposited as thick as 800Angstrom , a grid electrode 106 is formed on the upside of the electrode 105, and thus a PIN type solar cell is formed. In result, it is clear that there subsist a range of grain diameter optimal or adapted from a light reflecting metal polycrystalline film and a range of level difference optimal or adapted for irregularities formed on its surface. |
