| 发明名称 |
Method of fabricating a semiconductor device having an insulating side wall |
| 摘要 |
A method of fabricating semiconductor devices comprises the following process of: forming an electrode leading out window having its vertical side wall at a given position in the functional element formed on a semiconductor substrate; forming an insulating film on the surface of the side wall; and depositing an electrode metal in the leading out window. <IMAGE> |
| 申请公布号 |
EP0519473(B1) |
申请公布日期 |
1998.09.30 |
| 申请号 |
EP19920110319 |
申请日期 |
1992.06.19 |
| 申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
SAKAMOTO, MASARU;FUJITA, KEI |
| 分类号 |
H01L21/28;H01L21/266;H01L21/285;H01L21/331;H01L21/336;H01L21/768;H01L23/485;(IPC1-7):H01L21/60 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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