发明名称 |
Method for removing organic contaminants from a semiconductor surface |
摘要 |
<p>The purpose of the present invention is related to a method for removing organic contamination from a substrate. Said substrate can be a semiconductor surface. Said method can be applied for the removal of photoresist and organic post-etch residues from silicon surfaces. Said organic contamination can be a confined layer covering at least part of said substrate. Said confined layer can have a thickness in a range of submonolayer coverage to 1 mu m. Said method is applicable for either gasphase or liquid processes. <IMAGE></p> |
申请公布号 |
EP0867924(A2) |
申请公布日期 |
1998.09.30 |
申请号 |
EP19980870026 |
申请日期 |
1998.02.10 |
申请人 |
INTERUNIVERSITAIR MICRO-ELEKTRONICA CENTRUM VZW |
发明人 |
DE GENDT, STEFAN;SNEE, PETER;HEYNS, MARC |
分类号 |
G03F7/42;H01L21/306;H01L21/311;H01L21/768;(IPC1-7):H01L21/306 |
主分类号 |
G03F7/42 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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