| 摘要 |
<p>The resistivity of titanium nitride films is less than about 60 mu Ohm-cm, and, the film surface roughness is less than 6 ANGSTROM by using a combination of particular process conditions during deposition of the film. In particular, titanium atoms produced by impact of inert gas ions upon a titanium target travel through a high density, inductively coupled rf plasma, an ion metal plasma (IMP), in which the titanium atoms are at least partially ionized. The ionized titanium ions are contacted with ionized nitrogen atoms also present in the processing chamber. The resultant gas phase composition is contacted with the surface of a semiconductor substrate on which a titanium nitride barrier layer is to be deposited. By controlling the gas phase deposition mixture composition, the quantity of the deposition mixture contacting the substrate surface over a given time period, and the pressure in the process vessel, the resistivity and surface roughness of the titanium nitride layer is adjusted. ä200ü crystal orientation is obtained by increasing the ionized content of the deposition mixture and by slowing the rate of deposition of the titanium nitride film (barrier layer). <IMAGE></p> |
