发明名称 |
Semiconductor device having at least one field oxide area and CMOS vertically modulated wells (VMW) with a buried implanted layer for lateral isolation having a first portion below a well, a second portion forming another, adjacent well, and a vertical po |
摘要 |
CMOS vertically modulated wells have a structure with a buried implanted layer for lateral isolation (BILLI). This structure includes a field oxide area, a first retrograde well of a first conductivity type, a second retrograde well of a second conductivity type adjacent the first well, and a BILLI layer below the first well and connected to the second well by a vertical portion. This structure has a distribution in depth underneath the field oxide which kills lateral beta while preventing damage near the surface under the field oxide.
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申请公布号 |
US5814866(A) |
申请公布日期 |
1998.09.29 |
申请号 |
US19960617293 |
申请日期 |
1996.03.18 |
申请人 |
GENUS, INC. |
发明人 |
BORLAND, JOHN O. |
分类号 |
H01L21/761;H01L21/762;H01L21/8238;H01L27/092;(IPC1-7):H01L29/76;H01L29/94 |
主分类号 |
H01L21/761 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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