发明名称 ELECTRODE PLATE FOR PLASMA ETCHING
摘要 PROBLEM TO BE SOLVED: To provide an electrode plate for plasma etching which is less consumed by etching and is suppressed in the generation of particles. SOLUTION: This electrode plate consists of the following planar glassy carbon material: The relative intensity ratio R thereof is defined by the equation: R=IA/IB in the Raman spectral analysis using an argon ion laser beam of a wavelength 5145 angstrom. The material has such structure characteristic that the difference in the R value between the surface layer part and the central part at the section is <=0.1 and the R value in the central part at the section is in a range of 1.2 to 1.7. In the equation, IA denotes the spectral intensity in a band region of 1260&plusmn;100cm<-1> and IB spectral intensity in a band region of 1580&plusmn;100cm<-1> .
申请公布号 JPH10259488(A) 申请公布日期 1998.09.29
申请号 JP19970085680 申请日期 1997.03.19
申请人 TOKAI CARBON CO LTD 发明人 NOBATA MITSUHARU
分类号 C01B31/02;C23F4/00;H01L21/302;H01L21/3065 主分类号 C01B31/02
代理机构 代理人
主权项
地址