| 摘要 |
PROBLEM TO BE SOLVED: To minimize the area of diffused layers, which are linked to contacts, and to enhance the characteristics of a solar cell by a method wherein insular impurity layers, which are linked to an electrode layer through contact holes, and insular impurity layers, which are not linked to the electrode layer, are respectively provided independently in the same plane of a crystal silicon substrate. SOLUTION: N-type heavily doped layers 2 are formed in a P-type single crystal silicon substrate 1 and moreover, holes are opened in the surface of the substrate and an n-type lightly doped layer 3 is formed on roughly the whole surface of a light irradiation surface as an emitter layer. After that, a surface oxide film 4 and a backside oxide film 6 are formed, a perforating is performed in the backside of the substrate to perform thermal diffusion in p-type heavily doped layers 5 and 5' using this film 6 as a diffusion mask and an oxide film is formed also on the diffused layers. Contact holes 7 are formed only in the layers 5 under backside oxide films 6' formed on the layers 5 and 5', which come into contact with this film 6, and a backside electrode 8 is formed. Moreover, after contact holes are formed in the film 4 on the surface side of the substrate 1, finger electrodes 9 are formed. |
