| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a semiconductor device into a structure, wherein a P side metallic electrode does not come into contact directly with a through lattice defect, and to prevent a metallic element from being diffused fast by a method wherein a P-type IV compound semiconductor region is formed on a crystal region consisting of a nitride semiconductor material and moreover, the metallic electrode is formed on this IV compound semiconductor region. SOLUTION: A P-type IV compound semiconductor region is formed on a crystal region consisting of a nitride semiconductor material and moreover, a metallic electrode is formed on this IV compound semiconductor region. That is, an N-type GaN layer 30, an undoped GaInN buffer layer 29, an undoped GaInN luminous layer 28, an undoped GaInN buffer layer 27, a P-type AlGaN layer 26 and a P-type GaN layer 25 are grown on a substrate crystal 31. Subsequently, a P-type polysilicon layer 24 is adhered to the layer 25 and a P-type polysilicon layer 23 is grown on the layer 24. The obtained wafer is subjected to dry etching from a P side and is subjected to mesa etching until the N-type nitride layer appears, a metallic electrode 22 is formed on the surface of a P-type mesa and a metallic electrode 21 is formed on the N-type nitride layer exposed by the etching. |
