| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing equipment which allows an interconnection pattern to be formed accurately to a desired size, exactly to the size of a mask, even if a step in a base is larger than a focus depth at the time of formation of a photoresist pattern. SOLUTION: This method includes a first process, wherein an interlayer insulating film 13 having a step 101 is formed, a second process wherein a conductive film 14 is deposited on the interlayer insulating film 13, and a third process wherein interconnection patterns 16a, 16b are formed. In the third process, two metallic masks are prepared, one for patterning a section lower than the step section 101 and the other for patterning a section higher than the step section 101, and a resist pattern is formed using these metallic masks. Then an etching is conducted, and finally the resist is removed. |
