| 摘要 |
PROBLEM TO BE SOLVED: To enhance the crystallinity of a thin crystalline semiconductor film, which is an active layer, by a method wherein an amorphous semiconductor film having a specified thickness is annealed to crystallize the amorphous semiconductor film and thereafter, the crystallized semiconductor film is etched to form the crystallized semiconductor film into the thin crystalline semiconductor film and this thin crystalline semiconductor film is used as the active layer of a TFT. SOLUTION: A silicon oxide film 102 is formed on a substrate 101 as a base oxide film and an amorphous silicon film 103 is formed on the film 12 in a thickness of 400Åor thicker. After that, a nickel-containing layer 104 is formed on the film 103, the film 103 is subjected to heat treatment in a nitrogen atmosphere to thermally anneal the film 103 and a KrF excimer laser beam is emitted on the film 103 for enhancing the crystallinity of the film 103 to crystallize the incomplete crystallized part of the film 13. After that, an etching of the crystalline silicon film is performed and the crystalline silicon film is formed into a film thickness of 150 to 300Å. Then, the crystalline silicon film 105 obtained in such a way is subjected to dry etching, an insular region 106 is formed and this insular silicon film 106 is used as an active layer of a TFT. |
