| 摘要 |
In a method of forming patterns for use in manufacturing electronic devices, a radiation-sensitive layer is formed on a semiconductor substrate by coating a radiation-sensitive composition containing a compound which generates acid by chemical radiation and a compound which has one bond capable of being decomposed by the acid generated. Then, an area of the radiation-sensitive layer adjacent to a predetermined pattern-formation area is irradiated. Subsequently, a surface of the radiation-sensitive layer is treated with a basic compound and washed, thereby inactivating the acid generated in the irradiation area. Thereafter, the predetermined pattern-formation area of the radiation sensitive layer treated with the basic compound is irradiated, followed by applying heat treatment to the substrate. Last, the radiation-sensitive layer is developed. With the method, a fine pattern having a rectangular cross-section together with suppressing size alteration caused by scattered light can be formed.
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