发明名称 |
Semiconductor device |
摘要 |
A semiconductor device including a plurality of grooves (21) formed on a top surface of a heat sink (51). A sealing resin (2) fills a portion between a lead frame (5) provided facing the top surface and the heat sink (51). The grooves (21) are formed on both sides of a center region (22) extending so as to divide the top surface in two. A power semiconductor element (11) is disposed above the center region (22) and a controlling semiconductor element (16) controlling the power semiconductor element (11) is disposed above the region where the grooves (21) are formed. The above construction suppresses thermal resistance interposed in a path through which heat loss in the power semiconductor element (11) is radiated to the heat sink (51) and improves heat radiating efficiency while maintaining close contact between the sealing resin (2) and the heat sink (51).
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申请公布号 |
US5814878(A) |
申请公布日期 |
1998.09.29 |
申请号 |
US19960664498 |
申请日期 |
1996.06.17 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
HIRAKAWA, SATOSHI;TAKAO, HARUO |
分类号 |
H01L23/29;H01L21/56;H01L23/28;H01L23/36;H01L23/433;H01L23/495;H01L25/07;H01L25/18;(IPC1-7):H01L23/495 |
主分类号 |
H01L23/29 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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